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| BAT 68-07W Silicon Schottky Diodes * For mixer applications in the VHF / UHF range * For high-speed switching applications 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 68-07W Marking Ordering Code 87 Q62702-A1200 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 89 C Junction temperature Operating temperature range Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 8 130 150 150 -65...+150 - 65 ...+150 Unit V mA mW C C C VR IF Ptot Tj Top Tstg RthJA RthJS 570 410 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAT 68-07W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. 0.1 1.2 V A nA mV 340 318 390 340 500 Unit V(BR) IR IR VF 8 - I (BR) = 10 A Reverse current VR = 1 V Reverse current VR = 1 V, TA = 60 C Forward voltage I F = 1 mA I F = 10 mA AC characteristics Diode capacitance CT rf - - 1 10 pF VR = 1 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF = f (TA*;TS) * Package mounted on alumina 140 mA 120 110 100 TS TA IF 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter 10 2 mA BAT 68... EHD07101 TA = Parameter 10 2 A 10 1 BAT 68... EHD07102 F R TA = -40 25 85 150 C C C C TA = 150 C 10 1 10 0 85 C 10 0 10 -1 10 -1 10 -2 25 C 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 V 0.6 10 -3 0 1 2 3 V 4 VF VR Diode capacitance CT = f (V R) f = 1MHz BAT 68... EHD07103 Differential forward resistance rf = f (IF) f = 10 kHz CT 1.0 pF 10 3 BAT 68... EHD07104 rf 10 2 0.5 10 1 0 0 1 2 3 V 4 10 0 10 -1 10 0 10 1 mA 10 2 VR F 44 Semiconductor Group Semiconductor Group Sep-09-1998 1998-11-01 BAT 68-07W Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in k 10 4 mV 10 3 10 2 VO 10 1 Testcircuit: 10 0 10 -1 1000 500 200 100 50 20 D.U.T VI R IN 50 CL 1nF R L V0 RL=10 10 -2 0 10 10 1 10 2 mV 10 3 VI Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 |
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